The application of Hall effect device for the measurement of low magnetic field.

Abstract

An indium antimonide Hall element is prepared, operated at liquid nitrogen temperature in combination with 5 inch long mumetal concentrator. The polycrystalline indium antimonide Hall probe provides an overall sensitivity of 12500 Volts/ampere-kilo gauss. The device is capable of measuring down to 2 x 10-5 gauss peak in the frequency range dc to 25 c/s. The factors which restrict the lowest limit of magnetic field detection are discussed and methods are suggested to further improve the sensitivity of the device.