The application of Hall effect device for the measurement of low magnetic field.

dc.contributor.author	Chaudhry, Nazir A.
dc.date.accessioned	2009-04-17T16:01:30Z
dc.date.available	2009-04-17T16:01:30Z
dc.date.created	1965
dc.date.issued	1965
dc.degree.level	Masters
dc.degree.name	M.Sc.
dc.description.abstract	An indium antimonide Hall element is prepared, operated at liquid nitrogen temperature in combination with 5 inch long mumetal concentrator. The polycrystalline indium antimonide Hall probe provides an overall sensitivity of 12500 Volts/ampere-kilo gauss. The device is capable of measuring down to 2 x 10-5 gauss peak in the frequency range dc to 25 c/s. The factors which restrict the lowest limit of magnetic field detection are discussed and methods are suggested to further improve the sensitivity of the device.
dc.format.extent	78 p.
dc.identifier.citation	Source: Masters Abstracts International, Volume: 45-06, page: 3236.
dc.identifier.uri	http://hdl.handle.net/10393/10759
dc.identifier.uri	http://dx.doi.org/10.20381/ruor-16994
dc.publisher	University of Ottawa (Canada)
dc.subject.classification	Engineering, Electronics and Electrical.
dc.title	The application of Hall effect device for the measurement of low magnetic field.
dc.type	Thesis

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