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Investigation for the structural stress of SiO2 thin films and its distribution on the large-wafer created by plasma enhanced chemical vapor deposition

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dc.contributor.authorSun, DeGui
dc.contributor.authorSun, Qingyu
dc.contributor.authorXing, Wenchao
dc.contributor.authorSun, Zheyu
dc.contributor.authorShang, Hongpeng
dc.contributor.authorChang, Liyuan
dc.contributor.authorWang, Xueping
dc.contributor.authorLiu, Peng
dc.contributor.authorHall, Trevor
dc.date.accessioned2019-03-25T17:23:35Z
dc.date.available2019-03-25T17:23:35Z
dc.date.issued2018
dc.identifier.doi10.1063/1.5045516en_US
dc.identifier.issn2158-3226en_US
dc.identifier.urihttps://doi.org/10.20381/ruor-23175
dc.identifier.urihttp://hdl.handle.net/10393/38925
dc.language.isoenen_US
dc.titleInvestigation for the structural stress of SiO2 thin films and its distribution on the large-wafer created by plasma enhanced chemical vapor depositionen_US
dc.typeArticleen_US

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