Performance Characterization of Silicon-On-Insulator (SOI) Corner Turning and Multimode Interference Devices

En cours de chargement...
Vignette d'image

Date

Nom de la revue

ISSN de la revue

Titre du volume

Éditeur

Université d'Ottawa / University of Ottawa

Résumé

Silicon-on-insulator (SOI) technology has become increasingly attractive because of the strong light confinement, which significantly reduces the footprint of the photonic components, and the possibility of monolithically integrating advanced photonic waveguide circuits with complex electronic circuits, which may reduce the cost of photonic integrated circuits by mass production. This thesis is dedicated to numerical simulation and experimental performance measurement of passive SOI waveguide devices. The thesis consists of two main parts. In the first part, SOI curved waveguide and corner turning mirror are studied. Propagation losses of the SOI waveguide devices are accurately measured using a Fabry-Perot interference method. Our measurements verify that the SOI corner turning mirror structures can not only significantly reduce the footprint size, but also reduce the access loss by replacing the curved sections in any SOI planar lightwave circuit systems. In the second part, an optical 90o hybrid based on 4 × 4 multimode interference (MMI) coupler is studied. Its quadrature phase behavior is verified by both numerical simulations and experimental measurements.

Description

Mots-clés

silicon photonics, silicon-on-insulator, propagation loss, multimode interference coupler, corner turning mirror

Citation

Approbation

Évaluation

Complété par

Référencé par