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Down-Converter Gilbert-Cell Mixer for WiMax Applications using 0.15μm GaAs HEMT Technology

dc.contributor.authorAlmohaimeed, Abdullah Mohammed H
dc.contributor.supervisorYagoub, Mustapha
dc.date.accessioned2014-01-08T16:40:45Z
dc.date.available2014-01-08T16:40:45Z
dc.date.created2014
dc.date.issued2014
dc.degree.disciplineGénie / Engineering
dc.degree.levelmasters
dc.degree.nameMASc
dc.description.abstractThe Worldwide Interoperability for Microwave Access, or WiMax, is a wireless communication technique based on IEEE 802.16 standards. Its advantage of sending high data rates over long distances, while using a single base station to cover a large area, has made this technique a flexible and reliable solution for public wireless networks. WiMax has two main types of networks: Fixed and Mobile. The most popular transceiver used in WiMax applications is the “Direct-Conversion Architecture” due to its high level of integration and less component requirements, which leads to reduced power dissipation. In Direct Conversion Architecture, the mixer is a key block in the transceiver chain. Depending on design specifications and constraints, different types of mixers may be considered. However, the most appropriate down converter mixer for WiMax applications is the Gilbert-cell mixer. This thesis will then explore the design of a down converter Gilbert-Cell Mixer within the realm of Fixed WiMax technology. This design was achieved in the commercial circuit simulator Advanced Design System (ADS) using the 0.15mm InGaAs pHEMT technology process provided by Win Semiconductor Crop.
dc.embargo.termsimmediate
dc.faculty.departmentScience informatique et génie électrique / Electrical Engineering and Computer Science
dc.identifier.urihttp://hdl.handle.net/10393/30375
dc.identifier.urihttp://dx.doi.org/10.20381/ruor-3462
dc.language.isoen
dc.publisherUniversité d'Ottawa / University of Ottawa
dc.subjectWiMax
dc.subjectDown-converter
dc.subjectGilbert-cell
dc.subjectMixer
dc.titleDown-Converter Gilbert-Cell Mixer for WiMax Applications using 0.15μm GaAs HEMT Technology
dc.typeThesis
thesis.degree.disciplineGénie / Engineering
thesis.degree.levelMasters
thesis.degree.nameMASc
uottawa.departmentScience informatique et génie électrique / Electrical Engineering and Computer Science

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