A feasibility study of the application of ion and electron beams to semi-conductor device fabrication.
| dc.contributor.author | Hayes, R. E. | |
| dc.date.accessioned | 2009-03-23T14:47:03Z | |
| dc.date.available | 2009-03-23T14:47:03Z | |
| dc.date.created | 1970 | |
| dc.date.issued | 1970 | |
| dc.degree.level | Masters | |
| dc.degree.name | M.A.Sc. | |
| dc.identifier.citation | Source: Masters Abstracts International, Volume: 40-07, page: . | |
| dc.identifier.uri | http://hdl.handle.net/10393/6992 | |
| dc.identifier.uri | http://dx.doi.org/10.20381/ruor-11563 | |
| dc.publisher | University of Ottawa (Canada) | |
| dc.subject.classification | Engineering, General. | |
| dc.title | A feasibility study of the application of ion and electron beams to semi-conductor device fabrication. | |
| dc.type | Thesis |
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