Electron transport properties of gallium arsenide, gallium aluminum arsenide and indium phosphide
| dc.contributor.author | Lee, Hyung Jae | |
| dc.date.accessioned | 2012-03-13T19:46:49Z | |
| dc.date.available | 2012-03-13T19:46:49Z | |
| dc.date.created | 1978 | |
| dc.date.issued | 1978 | |
| dc.degree.level | Doctoral | |
| dc.description.abstract | Abstract not available. | |
| dc.format.extent | 272 p. | |
| dc.identifier.citation | Source: Dissertation Abstracts International, Volume: 72-03, Section: B, page: . | |
| dc.identifier.uri | http://hdl.handle.net/10393/20896 | |
| dc.identifier.uri | http://dx.doi.org/10.20381/ruor-17237 | |
| dc.publisher | University of Ottawa (Canada) | |
| dc.subject.classification | Engineering, Electronics and Electrical. | |
| dc.title | Electron transport properties of gallium arsenide, gallium aluminum arsenide and indium phosphide | |
| dc.type | Thesis |
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