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Height distributions of uncapped InAs/InGaAsP/InP quantum dashes and their effect on emission wavelengths

dc.contributor.authorObhi, Ras-Jeevan K.
dc.contributor.authorSchaefer, Sebastian W.
dc.contributor.authorValdivia, Christopher E.
dc.contributor.authorPoole, Philip J.
dc.contributor.authorLiu, Jiaren
dc.contributor.authorLu, Zhenguo
dc.contributor.authorHinzer, Karin
dc.date.accessioned2022-04-26T16:13:07Z
dc.date.available2022-04-26T16:13:07Z
dc.date.issued2022
dc.description.abstractThe emission wavelength of self-assembled quantum dashes can be controlled by their height. Uncapped InAs/InGaAsP/InP quantum dashes are found to have two distinct heights, which we have measured with atomic force microscopy and denoted the plateau and the peak heights. These heights range from 0.50 nm to 2.35 nm. Under the same growth conditions, for increasing uncapped quantum dash heights we observe an increase in the photoluminescence peak emission wavelength from approximately 1535 to 1543 nm for the capped layers. A growth temperature of 520°C is determined to achieve uniform height distribution for 1550 nm emission using chemical beam epitaxy.en_US
dc.identifier.doi10.1117/12.2609954en_US
dc.identifier.isbn9781510648913en_US
dc.identifier.urihttp://hdl.handle.net/10393/43518
dc.identifier.urihttps://doi.org/10.20381/ruor-27733
dc.language.isoenen_US
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 International*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/*
dc.subjectquantum doten_US
dc.subjectquantum dashen_US
dc.subjectquantum dash laseren_US
dc.subjectatomic force microscopyen_US
dc.subjectemission wavelengthen_US
dc.subjectepitaxyen_US
dc.subjectStranski-Krastanow growthen_US
dc.titleHeight distributions of uncapped InAs/InGaAsP/InP quantum dashes and their effect on emission wavelengthsen_US
dc.typeConference Proceedingen_US

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