Polarization Dependent Femtosecond Laser Microstructuring of Silicon

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Title: Polarization Dependent Femtosecond Laser Microstructuring of Silicon
Authors: Al-Khazraji, Hajar
Date: 2015
Abstract: Microstructuring of silicon is performed to alter its optical and electrical properties for use in photonic devices. Femtosecond lasers are a favourable structuring tool because they are extremely precise due to the confinement of their interaction to the focal volume. Experiments were carried out on N-type, P-type, and intrinsic silicon with a femtosecond laser operating at 800 nm, with pulse duration of 40 fs, and 1 kHz repetition rate. A single pulse produced a micro-ring structure surrounding a crater. It is caused by the motion of material according to the pressure gradient induced by the Gaussian profile of the laser. Multiple-pulse structures were similar to the single pulse except for the central protrusion of material. Two factors are responsible for multiple-pulse structures: (1) geometrical difference of the plasma compared to the single pulse (2) reflections of shockwaves produce protruding structures. Polarization dependence of all structures was observed.
URL: http://hdl.handle.net/10393/31909
http://dx.doi.org/10.20381/ruor-6801
CollectionThèses, 2011 - // Theses, 2011 -
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