Study of semiconductor detectors for scanning electron microscope.

dc.contributor.author	Ramana, Pappu Venkata.
dc.date.accessioned	2009-04-17T16:04:02Z
dc.date.available	2009-04-17T16:04:02Z
dc.date.created	1966
dc.date.issued	1966
dc.degree.level	Masters
dc.degree.name	M.Sc.
dc.description.abstract	This thesis is concerned with semiconductor radiation detectors for the detection of back-scattered and secondary electrons in a scanning electron microscopes. The work consists of analysing, both theoretically and experimentally, Si p-n junction cells and Au-Si thin film contacts as regards their current gain when irradiated by electrons having energies in the range 4 to 8 Kev. The current gain, in both photovoltaic and photodiode modes is obtained and was of the order of 1000. This device virtually acts as a high gain amplifier with an electron beam as its input.
dc.format.extent	70 p.
dc.identifier.citation	Source: Masters Abstracts International, Volume: 45-06, page: 3253.
dc.identifier.uri	http://hdl.handle.net/10393/10914
dc.identifier.uri	http://dx.doi.org/10.20381/ruor-17069
dc.publisher	University of Ottawa (Canada)
dc.subject.classification	Engineering, Electronics and Electrical.
dc.title	Study of semiconductor detectors for scanning electron microscope.
dc.type	Thesis

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