Self-assembled quantum dot semiconductor nanostructures modeling: Photonic device applications

Abstract

A microscopic analysis of a vertical stack of self-assembled InAs/GaAs lens-shaped quantum dot nanostructures is presented. The analysis revolves around a rigorous Hamiltonian formulation of an eight-band k.p. perturbation to account for the lattice-mismatch strain endured by the islands. The numerical implementation yields the effective bandgap energy and electronic structure of an InAs/GaAs quantum dot. Within the framework of a resonant two-level energy system, material gain and absorption spectra are calculated up to a third-order susceptibility to include nonlinearity. The material gain polarization dependence is expressed in the dipole transition strength. Polarization-dependent anisotropy factors corresponding to different interband transitions are derived and shown to satisfy a momentum conservation rule. Modal analysis of a rectangular core waveguide realized by imbedding the active quantum dot layer(s) into a cladding medium with lower refractive index is presented. Polarization-independent modal gain is achieved by optimizing the width of the rectangular core waveguide. In illustration of a quantum dot device, a realistic semiconductor optical amplifier model accounting for both stimulated and spontaneous emission is considered. The calculated carrier density longitudinal profile yields other parameters characterizing the amplifier performance.