Silicon Phthalocyanines: Development of Structure-Property Relationships and Integration into Organic Thin-Film Transistors and Sensors

Abstract

Silicon phthalocyanines (R₂-SiPcs) are an emerging class of high-performance n-type or ambipolar organic semiconductors which have found application in organic electronic devices, including organic thin-film transistors (OTFTs), organic photovoltaics (OPVs) and organic light-emitting diodes (OLEDs). Owing to their tetravalent silicon metal centre, R₂-SiPcs can be substituted with a range of axial ligands including phenols, carboxylic acids, and silanes to tune their intermolecular interactions, optical properties, electronic properties and solubility. While early reports of R₂-SiPcs have demonstrated promising results, the relationship between their structure and performance in OTFTs is poorly understood. Additionally, many OTFTs with R₂-SiPcs as semiconductor only demonstrate n-type behaviour under inert atmospheres due to their shallow lowest unoccupied orbital level below -4.1 eV making them susceptible to electron trapping by moisture and oxygen. This thesis presents developments in both the understanding of how R₂-SiPc structure influences performance, device engineering and exploration of these materials in ammonia sensors. First, I develop of structure-property relationships for a catalogue of fifteen R₂-SiPcs integrated into OTFTs including eleven materials used in OTFTs for the first time. I then explore the influence of dielectric surface chemistry on the texture of R₂-SiPc films and their resulting performance in OTFTs using silane self-assembled monolayers and para-sexiphenyl to understand the weak epitaxial growth behaviour of this class of materials. Next, I report eight novel peripherally fluorinated and axially substituted silicon phthalocyanines (R₂-FₓSiPcs) to investigate the influence of peripheral and axial fluorination on air-stable electron transport and determine the threshold for achieving air-stable n-type OTFTs. Finally, I integrate R₂-FₓSiPcs into organic heterojunction ammonia gas sensors to understand the influence of peripheral fluorination on the majority charge carrier in this device architecture.