Chaudhry, Nazir A.2009-04-172009-04-1719651965Source: Masters Abstracts International, Volume: 45-06, page: 3236.http://hdl.handle.net/10393/10759http://dx.doi.org/10.20381/ruor-16994An indium antimonide Hall element is prepared, operated at liquid nitrogen temperature in combination with 5 inch long mumetal concentrator. The polycrystalline indium antimonide Hall probe provides an overall sensitivity of 12500 Volts/ampere-kilo gauss. The device is capable of measuring down to 2 x 10-5 gauss peak in the frequency range dc to 25 c/s. The factors which restrict the lowest limit of magnetic field detection are discussed and methods are suggested to further improve the sensitivity of the device.78 p.Engineering, Electronics and Electrical.The application of Hall effect device for the measurement of low magnetic field.Thesis