Kwiecinski, Przemyslaw Mark2013-11-072013-11-0720062006Source: Masters Abstracts International, Volume: 45-02, page: 0887.http://hdl.handle.net/10393/27260http://dx.doi.org/10.20381/ruor-11995Original experimental data for the temperature dependence of the Raman shift in silicon and gallium sulfide is presented. An all optical thermal conductivity method, using an equation presented by Perichon et a1.2 and Nonnenmacher et al. 23, is applied to silicon and gallium sulfide. Theoretical calculations by Moody et al.20 and Nissam et al. 22 are compared to the experimental results of Perichon et al. for the first time. The thermal conductivity of silicon is measured at 23°C, 200°C, and 300°C, and of gallium sulfide at 23°C. We investigate the possibility of measuring thermal conductivity at high pressures.78 p.enPhysics, Condensed Matter.Thesis