Lee, Hyung Jae2012-03-132012-03-1319781978Source: Dissertation Abstracts International, Volume: 72-03, Section: B, page: .http://hdl.handle.net/10393/20896http://dx.doi.org/10.20381/ruor-17237Abstract not available.272 p.Engineering, Electronics and Electrical.Electron transport properties of gallium arsenide, gallium aluminum arsenide and indium phosphideThesis