Obhi, Ras-Jeevan K.Schaefer, Sebastian W.Valdivia, Christopher E.Poole, Philip J.Liu, JiarenLu, ZhenguoHinzer, Karin2022-04-262022-04-2620229781510648913http://hdl.handle.net/10393/43518https://doi.org/10.20381/ruor-27733The emission wavelength of self-assembled quantum dashes can be controlled by their height. Uncapped InAs/InGaAsP/InP quantum dashes are found to have two distinct heights, which we have measured with atomic force microscopy and denoted the plateau and the peak heights. These heights range from 0.50 nm to 2.35 nm. Under the same growth conditions, for increasing uncapped quantum dash heights we observe an increase in the photoluminescence peak emission wavelength from approximately 1535 to 1543 nm for the capped layers. A growth temperature of 520°C is determined to achieve uniform height distribution for 1550 nm emission using chemical beam epitaxy.enAttribution-NonCommercial-NoDerivatives 4.0 Internationalhttp://creativecommons.org/licenses/by-nc-nd/4.0/quantum dotquantum dashquantum dash laseratomic force microscopyemission wavelengthepitaxyStranski-Krastanow growthConference Proceeding10.1117/12.2609954